发明名称 |
Teos-ozone planarization process |
摘要 |
A method for forming a planarization layer on a semiconductor device including the steps of first providing a substrate, then depositing a layer of a silicon-rich oxide material, then forming metal interconnects on the silicon-rich oxide layer, and depositing a TEOS-ozone oxide layer over the metal interconnects and the silicon-rich oxide layer such that a substantially planar surface is obtained.
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申请公布号 |
US5869394(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19960741195 |
申请日期 |
1996.10.29 |
申请人 |
MOSEL VITELIC, INC. |
发明人 |
CHEN, KUANG-CHAO;TU, TUBY |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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