发明名称 |
Method for fabricating dielectric device |
摘要 |
A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
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申请公布号 |
US5868948(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19960724654 |
申请日期 |
1996.10.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. |
发明人 |
FUJII, SATORU;TAKAYAMA, RYOICHI;KAMADA, TAKESHI;TOMOZAWA, ATSUSHI |
分类号 |
H01G4/12;H01L37/02;(IPC1-7):B44C1/22 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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