| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing ferroelectric thin films capable of producing Bix Sry (Taz Nb1-z )Ow thin films of the same compsn. with good reproducibility for a long period of time by a chemical vapor growth method for org. metals and a raw material for chemical vapor growth of organic metals to be used for the same. SOLUTION: The Bix Sry (Taz Nb1-z )Ow thin film (where 1.70<=x<=2.50, 0.60<=y<=1.20, 0<=z<=1, w=9±d, 0<=d<=1.0) is formed by the chemical vapor growth method for the org. metals using the gaseous raw material prepd. by mixing the gas produced by gasifying a soln. mixture 2 formed by dissolving BiPh3 , Sr(DPM)2 tetraglyme and at lease either of Ta(O-iPr)4 DPM and Nb(O- iPR)4 DPM (where Ph=C6 H5 , O-iPr=i-OC3 H7 , DPM=dipivaloylmethanate) into an org. solvent and an oxidative gas. |
