发明名称 |
Method for forming a thin film transistor |
摘要 |
A method for forming a field effect transistor which includes providing a substrate having thin film source and drain regions formed thereon; forming a thin film channel region intermediate the thin film source and drain regions, the thin film channel region comprising a first layer of semiconductor material, an etch stop layer formed over the first layer semiconductor material, and a second layer of material formed over the etch stop layer; forming a masking layer over the source and drain regions while leaving the thin film channel region effectively exposed; and removing a portion of the second layer of material selectively relative to the etch stop layer in the exposed thin film channel region.
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申请公布号 |
US5869360(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19960723945 |
申请日期 |
1996.09.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BATRA, SHUBNEESH;MANNING, MONTE;ABBOTT, TODD R. |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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