发明名称 |
Method of manufacturing semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.
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申请公布号 |
US5869363(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19960767315 |
申请日期 |
1996.12.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TERAMOTO, SATOSHI;KOYAMA, JUN;MIYANAGA, AKIHARU |
分类号 |
H01L21/20;H01L21/322;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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