发明名称 |
Semiconductor integrated circuit device and manufacturing method for the same |
摘要 |
A semiconductor integrated circuit device having an SOI structure is capable of preventing occurrence of leak current flowing from a diffusion layer even when a semiconductor element having a pn-junction is included in the semiconductor substrate. The semiconductor integrated circuit device having the SOI structure is formed with a semiconductor layer, or SOI layer, on a p-type semiconductor substrate through a buried insulating film and further with semiconductor circuit elements serving as functional elements at the SOI layer thus formed. As a protection transistor to protect the semiconductor circuit elements, a MOSFET may be formed in which n-type diffusion layers are formed in the semiconductor substrate. The n-type diffusion layers of the MOSFET are to be surrounded by p-type diffusion layers more highly doped than the semiconductor substrate.
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申请公布号 |
US5869872(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19970974700 |
申请日期 |
1997.11.19 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
ASAI, AKIYOSHI;SAKAKIBARA, JUN;SUZUKI, MEGUMI;FUJINO, SEIJI |
分类号 |
H01L27/04;H01L21/265;H01L21/822;H01L21/8238;H01L27/02;H01L27/06;H01L27/092;H01L27/12;H01L29/786;(IPC1-7):H01L23/62;H01L27/76;H01L27/01 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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