发明名称 |
Low temperature method of preparing GaN single crystals |
摘要 |
A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.
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申请公布号 |
US5868837(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19980006431 |
申请日期 |
1998.01.13 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
DISALVO, FRANCIS J.;YAMANE, HISANORI;MOLSTAD, JAY |
分类号 |
C30B9/00;C30B19/02;(IPC1-7):C30B29/38 |
主分类号 |
C30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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