| 摘要 |
Disclosed is a field effect transistor which has: an operating layer which is of a compound semiconductor; a first conductive layer which is formed as a channel layer; a second conductive layer which is formed below the first conductive layer and through which a current less than that flowing through the first conductive layer is flown; an ohmic electrode which is ohmic-junctioned with the second conductive layer; and a source electrode and a drain electrode which are junctioned with the first conductive layer; wherein the source electrode and the drain electrode are ohmic-junctioned with the ohmic electrode with a resistivity lower than the resistivity between the first conductive layer and the second conductive layer.
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