发明名称 |
Dynamic semiconductor memory device having excellent charge retention characteristics |
摘要 |
Level converter converts a word line group specifying signal, which is sent from a row decoder and has amplitude of a power supply potential Vcc and a ground potential GND, into mutually complementary logic signals WD and ZWD of a high voltage Vpp and a negative potential Vbb. An RX decoder decodes an address signal to output a signal of an amplitude of (Vpp-Vbb) specifying a word line in a word line group. A word driver provided corresponding to each word line transmits a word line specifying signal or a negative potential to the corresponding word line in accordance with signals WD and ZWD sent from a level converting circuit. The nonselected word line receives negative potential Vbb from a word driver. The selected word line receives high voltage Vpp from the word driver. It is possible to suppress a channel leak current at a memory transistor in the nonselected memory cell, which may be caused by the potential change of the word line and/or bit line, and a charge holding characteristic of the memory cell can be improved.
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申请公布号 |
US5870348(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19970789240 |
申请日期 |
1997.01.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMISHIMA, SHIGEKI;ARIMOTO, KAZUTAMI |
分类号 |
G11C11/401;G11C11/407;G11C11/408;G11C29/00;G11C29/04;G11C29/12;H03K3/356;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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