发明名称 |
Semiconductor single-crystal lift device |
摘要 |
A semiconductor single crystal lift device which comprises a crucible for melting materials for forming semiconductor single crystals and a radiation screen disposed at an upper portion of the crucible and formed of a reversed-cone-shaped adiabatic tube surrounding a lift zone, the apparatus being adopted for lifting up the semiconductor single crystal from a melt in the crucible, in which the radiation screen is divided into more than three adiabatic members, at least part of the adiabatic members being configured in a detachable fashion so that an adiabatic nature of the radiation screen can be partly altered.
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申请公布号 |
US5868836(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19970786766 |
申请日期 |
1997.01.21 |
申请人 |
KOMATSU ELECTRONIC METAL CO., LTD. |
发明人 |
NAKAMURA, SHIGEKI;SHIMOMURA, KOICHI;UCHIYAMA, TERUHIKO |
分类号 |
C30B15/00;C30B15/22;C30B29/06;C30B35/00;H01L21/208;(IPC1-7):C30B35/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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