发明名称 VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON EINKRISTALLINEN SCHICHTEN AUS KOHLENSTOFF
摘要 The invention relates to the methods of developing carbon films used in processing, the jewelry industry, optics, including X-ray, and in electronics. The method of single-crystal films development in a vacuum chamber includes carbon plasma development by means of spraying cathode-target of solid carbon, the acceleration of carbon ions and their precipitation on single-crystal substrate. In accordance with the method suggested, the developed carbon plasma is kept up by carbon atoms, sprayed from the cathode-target surface in smouldering discharge at DC in a magnetron system. To increase the carbon films growth rate, an additional longitudinal magnetic field is applied to the electric field, and to bring down resilient tension in them, the substrate is heated in the process of carbon film growth. The suggested method makes it possible to get dopped single-crystal carbon films by means of spraying dopping materials simultaneously with the spraying of cathode-target made of solid carbon.
申请公布号 DE69601216(D1) 申请公布日期 1999.02.04
申请号 DE1996601216 申请日期 1996.02.12
申请人 KAPPAROV, KAIRAT KAPPAROVIC, ALMATY, KZ 发明人 KAPPAROV, KAIRAT KAPPAROVICH, ALMATY, 480063, KZ;OMAROV, MARAT AKHMETOVICH, ALMATY, 480035, KZ
分类号 C23C14/06;C23C14/35;C30B23/02;H01J37/32 主分类号 C23C14/06
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