| 摘要 |
The invention relates to a method for producing a filter having very fine through holes. In this method, a blank (1), made of a weakly doped n- or ptype corrodible semi-conducting material, for example monocrystalline silicon, is connected either as an anode or cathode, depending on the doping. Said blank is electrochemically etched in an etching solution until through holes (2) form. To this end, a holding element (3) is fixed to the blank (1). The holding element (3) borders the surface of the blank (1) which is moistened with etching fluid, i.e. the filter surface that is to be produced. In this way, through holes are obtained with a diameter of as little as 1 to 2 nm, depending on the concentration of doping agent.
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