发明名称 SEMICONDUCTOR RADIATION DETECTORS WITH INTRINSIC AVALANCHE MULTIPLICATION IN SELF-LIMITING MODE OF OPERATION
摘要 <p>The disclosed invention includes an apparatus and method for detecting radiation in a detector. The radiation to be detected ionizes the atoms in the intrinsic silicon lattice of the detector to produce a small signal of freed electrons. The small signal is then amplified by avalanche multiplication in a self-limiting manner by preventing the amplified electrons from traveling through a resistive layer, thereby reducing the electric field to limit the avalanche multiplication. An imaging system incorporating the new detector design is also disclosed.</p>
申请公布号 WO1999005727(A1) 申请公布日期 1999.02.04
申请号 US1998015204 申请日期 1998.07.23
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