发明名称 Phase-shift photomask production with accurate pattern
摘要 A phase-shift photomask production process comprises (a) forming a surface recess in a transparent substrate and covering the substrate and the recess with a light screening layer; (b) forming a protective layer with apertures and etching the light screening layer through the apertures; (c) producing sidewall spacers on the side walls of the light screening layer and the protective layer and etching the substrate to a predetermined depth using the spacers as mask; and (d) removing the sidewall spacers and the protective layer. Also claimed is a similar process in which two photoresist films are used instead of the protective layer.
申请公布号 DE19802369(A1) 申请公布日期 1999.02.04
申请号 DE1998102369 申请日期 1998.01.22
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 LEE, JUNE SEOK, SEOUL/SOUL, KR
分类号 G03F1/08;G03F1/00;G03F1/29;G03F1/30;G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F1/14 主分类号 G03F1/08
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