| 摘要 |
<p>Provided are pyrolytic chemical vapor deposition techniques for producing thin silicone-like films by way of processes that eliminate electron impact, ion bombardment, and UV irradiation events. To form a silicone film on a surface of a structure in accordance with the invention, the structure surface is exposed to a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments, while the structure surface is maintained substantially at a temperature lower than that of the reactive gaseous phase. An organosilicon compound is exposed to a pyrolyzing environment, where the conditions of the pyrolyzing environment are characterized as producing, in the vicinity of the structure surface, a substantially electrically neutral reactive gaseous phase that includes organosilicon molecular fragments. The structure surface is maintained substantially at a temperature lower than that of the pyrolyzing environment. A plasma environment can be provided simultaneously with the pyrolyzing environment, and can be further provided before or after the pyrolyzing environment. Silicone films of the invention are mechanically robust, environmentally stable, and photosensitive.</p> |
