| 摘要 |
PROBLEM TO BE SOLVED: To satisfactorily grow a gallium nitride compound semiconductor thin film on a substrate having its thin film growth surface held downward, by transporting a material gas into a reaction tube by using, as a carrier gas, a mixed gas containing nitrogen as a base and having hydrogen mixed at a concentration within a specified range. SOLUTION: A substrate 2 made of sapphire is set on a substrate holder 3 in a reaction tube 1. While a hydrogen gas is caused to flow from a pipe arrangement 7, the substrate 2 is heated and a substance attached to the surface thereof is cleaned off. Then, in the state where the temperature of the substrate is lowered, an AlN layer is grown while a hydrogen gas as a main carrier gas, a sub-carrier gas for generating a material gas, and ammonia are caused to flow. Then, only the sub-carrier gas is stopped and the temperature of the substrate is raised. After that, a nitrogen gas having a hydrogen gas mixed at a concentration of not less than 2% and less than 50% is used as a carrier gas, and a gallium nitride compound semiconductor thin film is groan while the carrier gas and the sub-carrier gas are caused to flow together. |
