| 摘要 |
PROBLEM TO BE SOLVED: To improve close adhesive property between a silicon nitride film and tungsten silicide film by pressing the silicon nitride film from the upper surface with an insulating film and also control the separation of the film of the tungsten silicide film and silicon nitride film which has been generated due to film stresses, resulting from the subsequent heat treatment. SOLUTION: When this apparatus is structured by providing a wiring 6, which is formed by patterning of a tungsten polycide film formed on a semiconductor substrate 1 via an antireflection film using a photoresist film as the mask, many slits 10, which are provided through a silicon nitride film 5 as the antireflection film and a tungsten polycide film (a polysilicon film 3 and a tungsten silicide film 4), are bored to the wiring 6. Therefore the wiring 6, including the inside of the slits 10, is covered with an interlayer insulating film 9 consisting of an NSG(Non-doped Silicated Glass) film 7 and a BPSG (Boron-Phosphor Silicate Glass) film 8. |
