发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the coupling noise on parallel address signal lines without increasing their line capacitance, thereby realizing a low noise and high speed synchronous cash SRAM, etc. SOLUTION: The device comprises address signal lines which need drive circuit stages and are disposed at comparatively long distances wherein inverters V01-V02, V11, V21-V22, V31, V41-V42, the drive circuits, are disposed at specified spacings s with offsets of a half the spacing s between adjacent address signal lines the signal wirings of which are formed by an uppermost layer e.g. 4-layer metal wiring layer M4 and disposed e.g. at pitches 4 times a minimal wiring pitch p. Lower metal wiring layer signal lines are not disposed parallel beneath the upper most metal wiring layer signal wirings below which no shield wiring is laid.
申请公布号 JPH1126606(A) 申请公布日期 1999.01.29
申请号 JP19970189242 申请日期 1997.06.30
申请人 HITACHI LTD 发明人 NAKAHARA SHIGERU;YABUKI SHINOBU;USAMI MASAMI;NISHIYAMA MASAHIKO;SAITO KAYOKO
分类号 G11C11/413;H01L21/8244;H01L27/10;H01L27/11 主分类号 G11C11/413
代理机构 代理人
主权项
地址