| 摘要 |
PROBLEM TO BE SOLVED: To provide the halftone phase shift mask prevented from occurrence of halation and decrease of a resist film due to excess light not contributing to patterning and capable of obtaining a good pattern and to provide its manufacturing method. SOLUTION: This halftone phase shift mask is provided with a transmitting part 1' composed only of transparent substrate to exposure light and a semitransmitting phase shift part 2' located around the transmitting part 1' and having the phase of an exposure light shifted and composed of a semitransmitting phase shifter layer having a transmittance of 3-20%, and a light shielding part 15 located around the part 2' leaving the space D, and it is manufactured by laminating on a transparent substrate 3 at least the semitransmitting phase shifter layer 4 and the light shielding layer 5 in this order or the reversed order and locating the layer 5 more backward than the phase shifter layer 4 from the center and the transparent part 1'. |
