发明名称 |
METHOD FOR ADJUSTING IRRADIATION POSITION WITH BEAM, FOREIGN MATTER DETECTING APPARATUS USING LASER BEAM, SCANNING ELECTRON MICROSCOPE AND COMPOSITION ANALYZING APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate adjustment of an irradiation position with beams to a stage. SOLUTION: A photodetector 51 for detecting laser beams is set at an XY stage 21 driven in XY directions. A laser light source 32 for making a laser beam irradiate the XY stage 21 and a different photodetector 33 from the photodetector 51 on the XY stage 21 are arranged above the XY stage 21. While a position where the photodetector 51 on the XY stage 21 detects the laser beam from the laser light source 32 is set as a reference position, the XY stage 21 and laser light source 32 are moved relatively. The photodetector 33 detects a scattering light from a wafer when the laser beam irradiates the wafer placed on the XY stage 21, thereby detecting a foreign matter on the wafer.</p> |
申请公布号 |
JPH1123482(A) |
申请公布日期 |
1999.01.29 |
申请号 |
JP19970174058 |
申请日期 |
1997.06.30 |
申请人 |
ADVANTEST CORP |
发明人 |
KIDO TAKASHI;KANO EIJI |
分类号 |
G01B11/30;G01N21/88;G01N21/93;G01N21/94;G01N21/956;G01N23/225;G01N23/227;H01J37/04;H01L21/66;(IPC1-7):G01N21/88 |
主分类号 |
G01B11/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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