发明名称 METHOD FOR ADJUSTING IRRADIATION POSITION WITH BEAM, FOREIGN MATTER DETECTING APPARATUS USING LASER BEAM, SCANNING ELECTRON MICROSCOPE AND COMPOSITION ANALYZING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To facilitate adjustment of an irradiation position with beams to a stage. SOLUTION: A photodetector 51 for detecting laser beams is set at an XY stage 21 driven in XY directions. A laser light source 32 for making a laser beam irradiate the XY stage 21 and a different photodetector 33 from the photodetector 51 on the XY stage 21 are arranged above the XY stage 21. While a position where the photodetector 51 on the XY stage 21 detects the laser beam from the laser light source 32 is set as a reference position, the XY stage 21 and laser light source 32 are moved relatively. The photodetector 33 detects a scattering light from a wafer when the laser beam irradiates the wafer placed on the XY stage 21, thereby detecting a foreign matter on the wafer.</p>
申请公布号 JPH1123482(A) 申请公布日期 1999.01.29
申请号 JP19970174058 申请日期 1997.06.30
申请人 ADVANTEST CORP 发明人 KIDO TAKASHI;KANO EIJI
分类号 G01B11/30;G01N21/88;G01N21/93;G01N21/94;G01N21/956;G01N23/225;G01N23/227;H01J37/04;H01L21/66;(IPC1-7):G01N21/88 主分类号 G01B11/30
代理机构 代理人
主权项
地址