| 摘要 |
PROBLEM TO BE SOLVED: To provide a high throughput and high accuracy alignment by patterning a processed layer between a processed layer for exposure of an optical transfer apparatus and that for the exposure of the next optical transfer apparatus, using a charged particle beam lithography system to correct optical distortions of the two transfer apparatus. SOLUTION: The method comprises forming a metal film and resist on a semiconductor substrate, exposing and developing a first min. size wiring pattern, using a Kr fluoride excimer laser stepper 101 of an optical transfer apparatus S1, etching to form a wiring, irradiating a contact hole pattern for connecting this wiring to a wiring of an upper layer, using a unit 104 of an electron beam lithography system S2, exposing and developing a second min. size wiring pattern, using an i-beam stepper 102 of an optical transfer apparatus S2 to form a wiring while the optical distortions of the two transfer apparatus S1, S2 are measured to correct the formed patterns' positions, based on the measured result. |
