SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD, AND DEVICE FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce a leakage current of an information storage capacitance element. SOLUTION: A lower electrode 60 constituting an information storage capacitance element C is made of a polycrystal silicon film formed by solid phase crystallization of a deposited amorphous silicon film. A CMP method is used for working the lower electrode 60. A capacitance insulating film 61 constituting the information storage capacitance element C is made of a silicon nitride film and a polycrystal tantalum oxide film. The silicon nitride film is formed by a CVD method. The tantalum oxide film is formed by depositing an amorphous tantalum oxide film by a CVD method and then thermally treating the tantalum oxide film in an oxidative atmosphere. In addition, an upper electrode 62 constituting the information storage capacitance element C is made of a titanium nitride film formed by a CVD method. The intrinsic stress of the titanium nitride film is caused to be not more than 1 GPa.