| 摘要 |
PROBLEM TO BE SOLVED: To measure with high sensitivity when measuring a semiconductor sample having a low specific resistance or using a short wavelength detecting electromagnetic wave by applying the detecting electromagnetic wave to the surface of a semiconductor wafer at a low incident angle near the critical angle. SOLUTION: An infrared semiconductor laser oscillator 1 emits an infrared light 16, a mirror 2 reflects it, a wavelength plate 3 adjusts so that the electric field vector is parallel to the incident plane, the light 16 passes through a prism 15 and glass stage 14 and is radiated on the back side of a semiconductor wafer 13 at an incident angle near the critical angle to the wafer surface, while a computer 8 adjusts the angle of a mirror 2 to determine the incident angleθ. Thus it is possible to measure with high sensitivity when measuring a semiconductor sample having a low specific resistance or using a short wavelength detecting electromagnetic wave.
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