| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage circuit of e.g. DRAM which is usable also as a half-bit DRAM by detaching a faulty memory array. SOLUTION: The output of reference potential supplying section 40 is connected to a cell plate line CPLj through a switch section 30j installed at each memory cell array 10j . Each cell plate line CPLj is connected with a capacitor 11b of a memory cell 11i ,j to give a reference potential for memory. When a faulty memory cell 11i ,j is present, the potential on the output side of the reference potential supply section 40 becomes abnormal. Hence by measuring the reference potential while successively on-off controlling the switching section 30j to detect the abnormal memory array 10j and by interrupting the fuse of the switching section 30j , the abnormal memory array 10j is permanently detached. |
