| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration of bond zones and wire breaking defects due to produced gases by forming on connection terminals of a lead frame an Cu alloy film contg. Cu in the main where the relative oxidation is set within specified range. SOLUTION: A transistor chip 5 is bonded to a die 7 through solder 6. Lead terminals 1, 2 are bonded to bonding wires 3, 4 in the form of a one-point bonding. On the wire bonding connection surfaces of the lead terminals 1, 2 high-corrosion-resistance Cu alloy films 10, 11 are formed to prevent avoid the connections from corroding due to a gas produced from a resin 9 and greatly prolong the high-temp. working life. If the relative oxidation to Cu in the Cu alloy film is less than 50%, the oxidation suppression effect is high. The protective action of the oxide film formed on the surface of the Cu alloy film suppresses the corrosion of the bond zones due to the gas produced from the resin. |
