| 摘要 |
PROBLEM TO BE SOLVED: To prevent size errors, caused by etching of a shade film and generation of a remained thin film of the shade film, and improve the accuracy of exposure. SOLUTION: This method of manufacturing a photomask comprises the formation of a resist pattern 12 on a transparent substrate 11 consisting of quartz, a formation of a groove section 13 by selectively etching the substrate 11 masked with the resist pattern, a formation of a shade film 14 consisting of silicon on a surface of the substrate 11 having the groove section 13, and an etching of the shade film 14 and the substrate 11 by CMP(chemical mechanical polishing) to a predetermined extent. The shade film 14 is embedded in the groove 13, and the surface of the substrate is planed as well. A transparent film is formed on the substrate 11 formed by the shade film on its surface. |
