| 摘要 |
PROBLEM TO BE SOLVED: To completely fill a connection hole by forming a second metal film which is the same type as a first one into a desired thickness by a chemical vapor deposition method at a temperature higher than a deposition temperature when the first metal film is formed. SOLUTION: An insulating film 2 is deposited on a substrate 1 and then a connection hole 4 covered with barrier metal 3 is formed in the film 2 by an ordinary method. Nextly, a first metal film 5 is formed on the barrier metal 3 by chemical vapor deposition and then a second metal film 6 is so formed as to fill the connection hole 4. At that time, the first metal film 5 is an accurate and smooth thin base film and the second metal film 6 is formed into a desired thickness by chemical vapor deposition at a temperature higher than the deposition temperature when the first metal film 5 is formed. By this method, there are only a few voids generated and therefore the connection hole 4 can be completely filled. |
