MANUFACTURE OF FILM STRUCTURE, ELECTRONIC DEVICE, RECORDING MEDIUM AND OXIDE CONDUCTIVE THIN FILM

摘要

PROBLEM TO BE SOLVED: To form a conductive thin film exhibiting a high surface flatness, which can control stress of a ferroelectric thin film, especially a PZT thin film exhibiting a high surface flatness and an enough selfpolarization which is to be formed on a Si single crystal substrate. SOLUTION: A film structure is comprised of a substrate having a Si 100 on its surface and an oxide conductive thin film formed on the substrate. The oxide conductive thin film is an epitaxial film, whose major constituent is strontium lutenite. At least 80% of the surface of the oxide conductive thin film exhibits 10 nm or less of average roughness Rz of 10 points in a reference length of 500 nm. A ferroelectric thin film of zircon titanium or so is formed on the oxide conductive thin film.