| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain and prevent the deposition of deposits in an outer circumferential part of an electrostatic attraction electrode and a focusing ring. SOLUTION: This device has an electrostatic attraction electrode 2 for mounting a wafer 1, a DC high voltage power supply which applies a DC high voltage to the electrostatic attraction electrode 2 for attracting the wafer 1, a mechanism for introducing cooling gas to the rear of the wafer 1 for cooling the wafer 1, a focusing ring 3 which is arranged in an outer circumference of the wafer 1 and protects the electrostatic attraction electrode 2 and a mechanism to blow gas in an area near the focus ring 3. Since it is constituted for blowing a cooling gas towards the focusing ring 3, it is possible to prevent deposition of a by-product 9 of low vapor pressure in the reaction product in an outer circumferential part of the electrostatic attraction electrode 2 and the focusing ring 3. Therefore, the wafer 1 is closely adhered to the surface of the electrostatic attraction electrode 2, and the temperature of the wafer 1 can be controlled in a stable state.</p> |
