FUSION-BOND ELECTRICAL FEED-THROUGH

摘要

A semiconductor device (400) has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment (400) of the device includes depressions (418) that contain edges of a diffused feed-through (410) so that imperfections at the edge (420) of the diffusion (408) do not interfere with bonding. The flexible structure is bonded to elevated areas (404, 406) thus hiding the imperfections. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.