| 摘要 |
<p>PROBLEM TO BE SOLVED: To detect the pattern of a specified value on a sample by providing a beam irradiating means, a reduction electric field generating means, a charged particle detecting means or the like, and microscopically observing the sample based on a signal from the charged particle detecting means. SOLUTION: When electrons are emitted from a field emitting cathode 11 to a diaphragm hole 12a, a magnetic convergent lens 13 converges electron beams through the diaphragm hole 12a of an anode 12. Then, then electron beams speed-reduced to a necessary level by a power supply 26 as a reducing means are radiated to a sample 32, secondary electrons are generated, but parts or most of the electrons passed through an auxiliary electrode 9 are collected by a secondary electron detector 22. Then, a detected current outputted from the secondary electron detector 22 is inputted through an amplifier 28 to a display 29. Since non-contact inspection is performed by using electron beams, even a fragile semiconductor sample is inspected with no damage, and a minute pattern of about 0.1μm corresponding to the very small spot diameter of an electron beam is detected.</p> |
