Integrated photocell array with p-n isolation

摘要

In an integrated photocell array with p-n isolation (5), in which the photocell p-n junctions (2) are irradiated with light, the p-n isolation (5) is protected against the light irradiation (8) preferably by reflective layers (6, 7) which deflect the incident light towards the p-n junctions (2). Preferably, the reflective layers (6, 7) consist of aluminium and only permit entry of light parallel to the planes of the p-n junctions (2). The p-n isolation (5) may be provided with a buried light barrier layer of silicide, especially tungsten silicide. When the photocells consist of emitter-free bipolar transistors operated as photodiodes, a cover may be provided merely for the edge p-n junctions.