| 摘要 |
<p>PROBLEM TO BE SOLVED: To accurately control the phase according to the design by forming wall spacers on the sidewalls of a light-shielding layer to form a second opining between the wall spacers, etching a transparent substrate to specified depth by using the second opening as a pattern, and then removing the wall spacers. SOLUTION: A polymer layer 613 is formed on a plate 610 having a formed pattern, and the layer 613 is subjected to back etching to form wall spacers 613' on the side faces of an inorg. resist 612 pattern and a resist film 611 pattern. Then second openings 660 are formed between the wall spacers 613'. Then the inorg. resist pattern 612 and wall spacers 613' are used as a mask to etch the plate 610 to have the same difference of height as the thickness of the shifter to determine the phases of the main patterns 621, 631 and 641. By removing the wall spacers 613', auxiliary patterns 622, 632 and 642 are formed in the region where the wall spacers 613' are formed.</p> |
