| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which the reliability is improved by preventing deterioration of a read margin of a sense amplifier at the time of data reading. SOLUTION: This semiconductor memory has a memory cell MC made of a MOS transistor having a floating gate, a sense amplifier for comparing a read voltage outputted from the memory cell MC with a predetermined reference voltage at the time of data reading and reproducing data recorded in the memory cell MC, and a reference voltage generating circuit which has a reference cell (RC1) having the same structure as the memory cell MC and a reference cell control voltage generating circuit 91 for generating a reference cell control voltage to be applied to the reference cell (RC1) and which generates a reference voltage from an output of the reference cell. In this case, a floating gate and a control gate of the reference cell are caused to have a short circuit.</p> |
