| 发明名称 |
IMPROVED DISSOLUTION INHIBITION RESISTS FOR MICROLITHOGRAPHY |
| 摘要 |
Improved dissolution inhibition resists for use in microlithography are disclosed herein. These resists are comprised of phenolic base resin(s) having increased inhibitability and which are suitable for use in resist formulations for microlithography and semidonductor applications.
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| 申请公布号 |
WO9904319(A1) |
申请公布日期 |
1999.01.28 |
| 申请号 |
WO1998US14510 |
申请日期 |
1998.07.14 |
| 申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;REISER, ARNOST |
发明人 |
REISER, ARNOST |
| 分类号 |
C08F212/14;C08G8/08;G03F7/004;G03F7/022;G03F7/023;G03F7/039;(IPC1-7):G03F7/023 |
主分类号 |
C08F212/14 |
| 代理机构 |
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