发明名称 |
METHOD OF USING HYDROGEN AND OXYGEN GAS IN SPUTTER DEPOSITION OF ALUMINUM-CONTAINING FILMS AND ALUMINUM-CONTAINING FILMS DERIVED THEREFROM |
摘要 |
Aluminum-containing films include an oxygen content within the films. The aluminum-containing films are formed by introducing hydrogen gas with argon or hydrogen gas/oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing films so formed are hillock-free and have low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress. |
申请公布号 |
WO9904054(A2) |
申请公布日期 |
1999.01.28 |
申请号 |
WO1998US14578 |
申请日期 |
1998.07.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RAINA, KANWAL, K.;WELLS, DAVID, H. |
分类号 |
H01L21/203;C23C14/00;C23C14/14;C23C14/18;H01L21/28;H01L21/285;H01L21/3205;H01L29/45;H01L29/49 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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