Filling semiconductor device trench and-or via with copper

摘要

A semiconductor device production process involves (a) applying a copper layer (5) to cover a conductive trench (3) and/or a connection via (3a) formed in an interlayer insulation layer (2) of a semiconductor wafer (10); (b) maintaining the wafer (10) in a high vacuum atmosphere of <= 1.33/*10<-3> Pa; (c) applying a copper oxidation preventing layer (4); (d) forcing the copper into the conductive trench (3) and/or via (3a) using a high pressure and high temperature inert gas; and (e) removing the copper layer by chemical-mechanical polishing to leave the copper in the conductive trench (3) and/or via (3a). Preferably, the oxidation preventing layer consists of Ti, Ta, W, Mo, Mn, their oxides, nitrides and/or silicides or silicon nitride. Also claimed are (i) a semiconductor device produced by the above method; and (ii) a semiconductor device with a conductive trench (3) formed in an interlayer insulation layer (2) on a semiconductor wafer (10), a via (3a) for electrically connecting a semiconductor element on the substrate with a connection to be formed in the trench (3) or with an upper connection layer to be formed on the insulating layer (2), and a conductive layer (5) formed in the trench (3) and/or in the via (3a).