Controllable semiconductor component

摘要

A substrate forms an off-zone (34) and has variously doped zones (14,16,18, 32, 48, 60) activating switching functions. These zones are connected to external terminals on the semiconductor component (10). From a gate zone (18) and a further doped zone set against this gate zone, charge carriers (36,38) can be fed into the off-zones through a conditioning current or reverse current flow in order to apply advance control to the semiconductor component. Being metallised around its circumference, the semiconductor component acts as the electrically conductive connector (40) which includes a diode switched in a forward conducting direction, while the charge carriers are fed into the off-zone. The semiconductor component is split into a gate trigger range or gate trigger thyristor and a range carrying a gate trigger current or main thyristor. The charge carriers can be fed through anode shorts.