| 摘要 |
An interlevel dielectric film 102 comprises an upper insulating layer 106b supported by insulating filaments 106a which are grown on a lower insulator layer 104. The absence of solid dielectric material between the filaments reduces the capacitance between the wiring structures 101, 103 of the semiconductor device. The filaments are formed by providing nucleation sites in the form of metallic clusters (eg Fe, Zn, Ti, or Pt) deposited on the lower insulator layer 104 and depositing the filament insulator material by CVD. |
