Three-dimensional multi-chip module having stacked semiconductor chips and process of fabrication thereof

摘要

A plurality of semiconductor chips (21a-21d) are sequentially bonded to one another so as to form a stacked semiconductor chip structure (21), and the stacked semiconductor chip structure is accommodated in a cavity (22a) formed in an insulating carrier (22); while the semiconductor chips (21a-21d) are being sequentially stacked, a conductive pattern (22c) formed on the bottom surface of the insulating carrier is connected to electrodes (21h/21i) on each of the semiconductor chips through bonding wires (23), and the three-dimensional multi-chip module is only slightly higher than the stacked semiconductor chip structure.