Hybrid polysilicon/amorphous silicon TFT and method of fabrication

摘要

The present invention discloses a hybrid polysilicon/amorphous silicon TFT device for switching a LCD and a method for fabrication wherein a n+ doped amorphous silicon layer is advantageously used as a mask during a laser annealing process such that only a selected portion of a hydrogenated amorphous silicon layer is converted to a crystalline structure while other portions retain their amorphous structure. As a result, a polysilicon TFT and at least one amorphous silicon TFT are formed in the same structure and the benefits of both a polysilicon TFT and amorphous silicon TFT such as a high charge current and a low leakage current are retained in the hybrid structure.