| 摘要 |
Exposure light 56 is split into first and second exposure light beams, and first and second phase shift masks 10A and 10B are irradiated with the first and second exposure light beams, respectively. In the first and second phase shift masks 10A and 10B a plurality of light shielding portions and a plurality of strip-shaped transmission portions are located between the plurality of light shielding portions for alternately inverting the phase of transmission exposure light. Transmitted and combined exposure light 78 resulting from interference is directed onto photoresist. In the above-described configuration, an aligner using a phase shift mask for forming a fine and dense contact hole pattern and a patterning method thereof are provided.
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