发明名称 FORMATION OF INSULATING FILM FOR GRAIN ORIENTED SILICON STEEL SHEET
摘要 PROBLEM TO BE SOLVED: To form an insulating film for a grain oriented silicon steel sheet, in which the instability of iron loss value is improved and the necessity of restrictions on the average grain size required of a compound hydroxide is obviated, by mixing a compound hydroxide and one or more kinds among boric acids, silicic acids, phosphoric acids, and salts thereof in specific ratio and subjecting the resultant solution mixture to treatment for improving dispersibility and compatibility. SOLUTION: The compound hydroxide is represented by general formula M<2+> 1-x M<3+> x (OH<-> )2+x-ny (A<n-> )y .mH2 O. In the formula, M<2+> is a divalent metal ion such as Be<2+> , M<3+> is a trivalent metal ion such as Al<3+> , A<n-1> is an n-valent anion such as OH<-> , (x) satisfies 0<x<1, and (m) is the number of molecules of interlamellar water. One or >=2 kinds among boric acids, silicic acids, phosphoric acids, and salts thereof are mixed by 0.5 to >10.0 pts.wt. with 1 pts.wt. of the above compound hydroxide. Then, treatment for improving dispersibility and compatibility is applied to the resultant solution mixture by the use of a propeller blade type agitator, etc., to refine the compound hydroxide, etc.
申请公布号 JPH1121675(A) 申请公布日期 1999.01.26
申请号 JP19970177298 申请日期 1997.07.02
申请人 NIPPON STEEL CORP;NITTETSU PLANT DESIGNING CORP 发明人 FUJII HIROYASU;TANAKA OSAMU;SUGIYAMA KIMIHIKO;MIYAMOTO IKUO;KITAGAWA HISAKAZU
分类号 B05D7/14;C09D5/25;C23C22/00;H01F1/16 主分类号 B05D7/14
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