Method for forming thin film pattern

摘要

The present invention provides a method for forming a thin film pattern having an excellent accuracy of the pattern. The method comprises the steps of: (a) exposing a polysilane layer formed from a polysilane having a structure of the formula: <IMAGE> wherein R1, R2, R3 and R4 indicate a group which is independently selected from the group consisting of a substituted or non-substituted aliphatic hydrocarbon residue, an alicyclic hydrocarbon residue and an aromatic hydrocarbon residue and m and n indicate an integer, provided on a substrate, to ultraviolet light selectively to form a latent image of the thin film pattern; and (b) dipping the polysilane layer in which the latent image of the thin film pattern is formed in a metal oxide sol and then drying.