发明名称 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
摘要 <p>A semiconductor integrated circuit device on a semiconductor chip comprises an address bus (ABUS), a data bus (DBUS, HDBUS, LDBUS), a central processing unit (CPU) being capable of processing data of a plurality of bits, and a flash memory (FMRY) having a plurality of memory cells (MC) arranged so as to be simultaneously erasable, said flash memory including a plurality of memory arrays (ARY0-ARY7) and being responsive to accessing from said central processing unit via said address bus and providing one data of a plurality of bits within a plurality of data stored therein to said central processing unit via said data bus in a manner in which each memory array outputs one bit (D0-C7) of said plurality of bits constituting said one data. <IMAGE></p>
申请公布号 EP0893799(A2) 申请公布日期 1999.01.27
申请号 EP19980118740 申请日期 1993.03.11
申请人 HITACHI, LTD.;HITACHI ULSI ENGINEERING CORP. 发明人 MATSUBARA, KIYOSHI;YASHIKI, NAOKI;BABA, SHIRO;ITO, TAKASHI;MUKAI, HIROFUMI;SATO, MASANAO;TERASAWA, MASAAKI;KURODA, KENICHI;SHIBA, KAZUYOSHI
分类号 G06F9/445;G06F15/78;G11C7/10;G11C16/04;G11C16/10;G11C16/16;G11C16/26;G11C16/30;H01L21/8247;H01L27/105;H01L27/115;(IPC1-7):G11C16/06 主分类号 G06F9/445
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