Semiconductor device and method for manufacturing the same

摘要

A semiconductor device and a method for manufacturing the same, in which a leak current generated in a pn junction formed between a silicon substrate and an epitaxial layer can be reduced. A silicon oxide film is formed on a silicon substrate having a (100) crystal plane. The silicon oxide film is patterned to form an opened portion and an inclined surface on a pattern edge of the silicon oxide film. The inclined surface forms an angle of 54.74+/-5 DEG with the silicon substrate. An epitaxial layer is formed in the opened portion by selective epitaxial growth.