发明名称 |
Process for fabricating SOI substrate |
摘要 |
The present invention provides a process for fabricating an SOI substrate with no peripheral scratches and with enhanced fabrication efficiency. The present process includes bonding a semiconductor wafer of an active substrate 1 and a semiconductor base wafer 2 to form a bonded wafer 4; surface-grinding the active substrate 1; spin etching the surface-ground active substrate 1; and PACE processing the etched active substrate 1 to form the active substrate into a thin film and simultaneously, to remove the non-bonded peripheral portion of the bonded wafer 4.
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申请公布号 |
US5863829(A) |
申请公布日期 |
1999.01.26 |
申请号 |
US19960748406 |
申请日期 |
1996.11.13 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
NAKAYOSHI, YUICHI;YAMAMOTO, HIROAKI;ISHII, AKIHIRO |
分类号 |
H01L21/306;H01L21/02;H01L21/20;H01L21/304;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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