| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent shifter arrangement from discrepancy to shorten a gate length by deducting a shorten gate pattern from an active region and in addition, alternately arranging a 90-degree phase shifter and 270-degree phase shifter across a gate. SOLUTION: Firstly, a gate- and a wiring patterns are taken out of a gate part on an active region of a gate layer and a wiring part on a field oxide film. Next, a wiring pattern is obtained which is a deduction of a common part to an active region pattern from the wiring pattern. In order to accelerate a transistor, a pattern is formed in which only the gate length of the gate pattern is shorten. To resolve the shorten gate pattern, the shorten gate pattern is deducted from the active region, and a 90-degree shifter part and a 270-degree shifter part are alternately arranged across the gate in the remaining pattern. Finally, the wiring pattern, the shorten gate pattern, and the shifter pattern are summed up.</p> |
