| 摘要 |
<p>PROBLEM TO BE SOLVED: To correct defects in a light-shielding film without decreasing the resist pattern transfer characteristics of a halftone phase shift mask by forming an intermediate thin film between a semitransparent phase shift film and a light-shielding film in such a manner that the intermediate thin film has etching selectivity for both of the layers. SOLUTION: An intermediate thin film 3 is formed between a semitransparent phase shift film 2 and a light-shielding film 4. The intermediate thin film 3 has etching selectivity for both of the halftone phase shift film 2 and the light- shielding film 4. When defects 10 are produced in the light-shielding film 4, the defects 10 are removed by using a focused ion beam 11 of Ga ion. By using the focused ion beam 11, damages 13 are produced in the intermediate thin film 3 as the lower layer. However, these damages can be removed at one time when the intermediate thin film 3 is removed by wet etching by a sodium hydroxide liquid. Thereby, the defects 10 in the light-shielding film can be corrected without leaving damages in the mask after correction.</p> |
