| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress a transmission of crack and the like developed during the separation of an individual unit semiconductor chip and water permeation into a semiconductor circuit device. SOLUTION: A semiconductor circuit device is formed on a semiconductor wafer 21 comprising of a unit semiconductor chip region and a scribe line region and, at the same time, a multilayer insulation layer 23 is formed on the unit semiconductor chip region and the scribe line region. The multilayer insulation layer 23 (23-1 to 23-N) is etched so that the semiconductor wafer of the scribe line region is exposed. A passivation layer 25 is formed on the uppermost layer of the scribe line region and the multilayer insulation layer 23 exposed on the semiconductor wafer. The semiconductor wafer and the passivation layer 25 are sawed and separated into individual region of the unit semiconductor chip.</p> |
